Near Resonance Enhanced Raman Scattering In Wide Band Gap AlInN Semiconductors
Vaman M. Naik
The ternary alloys of Al, Ga and In nitrides are of current interest because of their potential applications in semiconductor blue-light emitting diodes, lasers and high power transistors. Al1-xInxN exhibits the largest variation of energy band gap among these ternary alloys of ranging from 1.9 eV for InN to 6.2 eV for AlN at room temperature. Raman scattering has been a very useful technique in studying semiconductors. We have been able to detect optical phonon modes in Al1-xInxN (0 x 1) thin films grown on sapphire substrates using near resonance enhanced Raman scattering with UV and visible excitation energies. The first and higher order scattering has been observed due to a close match between the excitation energy and the band gap of the semiconductors. The experimental data are compared with the lattice dynamical calculations.