Raman Scattering Investigation of Thin 3x3 AlAs/GaAs Superlattice Structures
Bahram Roughani
Associate Professor of Applied Physics
Kettering University
The artificial layered structures of semiconductors such as superlattices (SLs) and quantum wells (QWs) are of great interest in optoelectronics and high-speed device applications. Artificially structured semiconductors introduce drastic changes in phonons and electronic behavior of the materials as compared with their bulk properties. A crucial issue in SLs and QWs properties is the interface roughness at the heterostructure region. Raman scattering is a powerful optical measurement technique that can provide information about interface properties of mutilayer structures. In this talk, the general properties of the artificially structured semiconductors and the crucial role of the interface in the electronic and phonon properties of SLs will be reviewed. General discussion on Raman scattering will be followed by specific case of Raman scattering for (AlAs)3(GaAs)3. Results of phonon dispersion based on a Rigid-ion model calculation will be presented, and the Raman measurement on our (AlAs)3(GaAS)3 will be compared with the rigid-ion model calculations.